Using just two NAND or inverter gates its possible to build a D type (or ‘toggle’) flip-flop with a push-button input. At power-up the output of gate N2 is at a logical ‘1’, ensuring that transistor T2 ...
SSD enthusiasts know all about SLC, MLC, and TLC, but there are some new acronyms in SSD town: V-NAND and CTF. Samsung announced in a press release last night that it has begun mass production of "3D ...
Macronix is releasing details of a new 3D NAND structure, called single-gate vertical channel (SGVC). The outfit will present a paper on the new tech at the 2017 IEEE International Electron Devices ...
Toshiba today announced the development of the first 48-layer, three-dimensional flash memory. Based on a vertical stacking technology that Toshiba calls BiCS (Bit Cost Scaling), the new flash memory ...
Samsung has announced production of the first solid state drives (SSD) based on its new 3D V-NAND flash memory. V-NAND flash memories read and write twice as fast as conventional NAND memories, and ...
Intel took half a day this week to talk about processor manufacturing technology. The company still believes in Moore's Law and says the principle will continue to guide and shape the microchip ...
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